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W Tungsten Target Rare Earth Smelting Titanium Tungsten Sputtering Target

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W Tungsten Target Rare Earth Smelting Titanium Tungsten Sputtering Target

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Model Number :Tungsten Sputtering Target
MOQ :Negotiate
Price :Negitionable
Payment Terms :L/C, D/A, D/P, T/T
Supply Ability :10000sets/month
Delivery Time :30 days after receiving down payment
Packaging Details :Standard export cartons
Name :Tungsten Sputtering Targets
Shape :Round
Material :W Tungsten
Chemical Composition :99.95% min.
Surface Condition :lathed, ground,polishing or mirror polishing
Application :Aerospace, Rare Earth Smelting
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W Tungsten Sputtering Targets Aerospace, Rare Earth Smelting

Tungsten Sputtering Targets widely used in Aerospace, rare earth smelting, electric light source, chemical equipment, medical equipment, metallurgical machinery, smelting equipment, petroleum, etc

PARAMETER

OD(mm)

ID(mm)

Length(mm)

Custom Made

140-300

120-280

100-3300

Model Number

W1

Shape

customized

Chemical Composition

99.95% W

Feature

(1) Smooth surface without pore,sporesch and o,ther imperfimperfectionsrinding or lathing edge, no cutting marks
(3) Unbeatable lerel levelterial purity
(4) High ductility
(5) Homogeneous micro microtrucaltureaser marking for your special Item with name, brand, purity size, and so on
(7)Every pcs of sputtering targets from the powder materials number, mixing workers, outgas and HIP time, machining person, and packing details are all made ourselves.

Specification

Atomic number

74

CAS number

7440-33-7

Atomic mass

183.84 [g/mol]

Melting point

3420 °C

Boiling point

5555 °C

Density at 20 °C

19.25 [g/cm3]

Crystal structure

Body-centered cubic

Coefficient of linear thermal expansion at 20 °C

4.410-6[m/(mK)]

Thermal conductivity at 20 °C

164 [W/(mK)]

Specific heat at 20 °C

0.13 [J/(gK)]

Electrical conductivity at 20 °C

18.2106[S/m]

Specific electrical resistance at 20 °C

0.055 [(mm2)/m]

APPLICATIONS

semiconductor

chemical vapor deposition (CVD)

physical vapor deposition (PVD) display

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